This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations.The text concentrates on silicon and gallium a… Mehr…
This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations.The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes.The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed.This book contains details of models for both equilibrium and non-equilibrium transport conditions.The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included.A section on modern quantum transport analysis techniques is included.Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.; PDF; Scientific, Technical and Medical > Physics > States of matter > Condensed matter physics, World Scientific Publishing Company<
hive.co.uk
No. 9789814507912. Versandkosten:Instock, Despatched same working day before 3pm, zzgl. Versandkosten. Details...
(*) Derzeit vergriffen bedeutet, dass dieser Titel momentan auf keiner der angeschlossenen Plattform verfügbar ist.
This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations.The text concentrates on silicon and gallium a… Mehr…
This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations.The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes.The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed.This book contains details of models for both equilibrium and non-equilibrium transport conditions.The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included.A section on modern quantum transport analysis techniques is included.Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.; PDF; Scientific, Technical and Medical > Physics > States of matter > Condensed matter physics, World Scientific Publishing Company<
No. 9789814507912. Versandkosten:Instock, Despatched same working day before 3pm, zzgl. Versandkosten.
1Da einige Plattformen keine Versandkonditionen übermitteln und diese vom Lieferland, dem Einkaufspreis, dem Gewicht und der Größe des Artikels, einer möglichen Mitgliedschaft der Plattform, einer direkten Lieferung durch die Plattform oder über einen Drittanbieter (Marketplace), etc. abhängig sein können, ist es möglich, dass die von eurobuch angegebenen Versandkosten nicht mit denen der anbietenden Plattform übereinstimmen.
Detailangaben zum Buch - Introduction To Semiconductor Device Modelling
EAN (ISBN-13): 9789814507912 Herausgeber: World Scientific Publishing Company
Buch in der Datenbank seit 2023-02-08T22:59:56+01:00 (Berlin) Detailseite zuletzt geändert am 2023-02-08T23:01:32+01:00 (Berlin) ISBN/EAN: 9789814507912
ISBN - alternative Schreibweisen: 978-981-4507-91-2
Weitere, andere Bücher, die diesem Buch sehr ähnlich sein könnten:
