After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switch… Mehr…
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology. Contents: SiC Material Properties (G Pensl et al.); SiC Homoepitaxy and Heteroepitaxy (A S Bakin); Ohmic Contacts to SiC (F Roccaforte et al.); Silicon Carbide Schottky Barrier Diode (J H Zhao et al.); High Power SiC PiN Rectifiers (R Singh); Silicon Carbide Diodes for Microwave Applications (K Vassilevski); SiC Thyristors (M E Levinshtein et al.); Silicon Carbide Static Induction Transistors (G C DeSalvo). Readership: Technologists, scientists, engineers and graduate students working on silicon carbide or other wide band gap materials and devices. Technology Technology eBook, World Scientific Publishing Company<
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switchin… Mehr…
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology. New Textbooks>Hardcover>Science>Engineering>ELEC Engr, World Scientific Publishing Company, Incorporated Core >2 >T<
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Sic Materials and Devices, Volume 1 Sic-Materials-and-Devices-Volume-1~~Michael-E-Levinshtein Science/Tech>Engineering>ELEC Engr Hardcover, World Scientific Publishing Company, Incorporated
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switch… Mehr…
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology. Contents: SiC Material Properties (G Pensl et al.); SiC Homoepitaxy and Heteroepitaxy (A S Bakin); Ohmic Contacts to SiC (F Roccaforte et al.); Silicon Carbide Schottky Barrier Diode (J H Zhao et al.); High Power SiC PiN Rectifiers (R Singh); Silicon Carbide Diodes for Microwave Applications (K Vassilevski); SiC Thyristors (M E Levinshtein et al.); Silicon Carbide Static Induction Transistors (G C DeSalvo). Readership: Technologists, scientists, engineers and graduate students working on silicon carbide or other wide band gap materials and devices. Technology Technology eBook, World Scientific Publishing Company<
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switchin… Mehr…
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology. New Textbooks>Hardcover>Science>Engineering>ELEC Engr, World Scientific Publishing Company, Incorporated Core >2 >T<
Sic Materials and Devices, Volume 1 Sic-Materials-and-Devices-Volume-1~~Michael-E-Levinshtein Science/Tech>Engineering>ELEC Engr Hardcover, World Scientific Publishing Company, Incorporated
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After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices ? power switching Schottky diodes and high temperature MESFETs ? are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
Detailangaben zum Buch - Sic Materials And Devices - Volume 1
EAN (ISBN-13): 9789812568359 ISBN (ISBN-10): 9812568352 Gebundene Ausgabe Erscheinungsjahr: 2006 Herausgeber: World Scientific Publishing Co Pte Ltd 344 Seiten Gewicht: 0,866 kg Sprache: eng/Englisch
Buch in der Datenbank seit 2007-10-17T18:02:28+02:00 (Berlin) Detailseite zuletzt geändert am 2023-05-04T11:00:40+02:00 (Berlin) ISBN/EAN: 9789812568359
ISBN - alternative Schreibweisen: 981-256-835-2, 978-981-256-835-9 Alternative Schreibweisen und verwandte Suchbegriffe: Autor des Buches: shur, rumy, schottky Titel des Buches: sic materials devices volume, sic non
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