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MOCVD growth and electrical characterisation of InAs thin films - Precious Shamba
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ISBN: 9783845409887

ID: 106399288

Many quantum confined devices such as lasers and high electron mobility transistors make use of the narrow band gap and high electron mobility of InAs. The difficulty associated with the preparation of InAs has hindered the development of devices employing this material system. Few systematic studies have been conducted on InAs grown by metalorganic chemical vapour deposition (MOCVD). The majority of recent InAs research has been device orientated and only a few reports of Zn and Sn doped InAs have appeared in print. Basic material characterisation has consequently been neglected. It is the aim of this book to contribute towards a better understanding of the fundamental material characteristics and in particular to improve on the current understanding of the growth dynamics of InAs. For this purpose, InAs epitaxial layers are grown by the MOCVD technique. The emphasis is on gaining an understanding of the influence of various n- and p-type dopants on the electrical and structural properties of the material as well as on the surface morphology of the material. Incorporation of n- and p-type dopants in InAs thin films using the MOCVD technique Buch (fremdspr.) Bücher>Fremdsprachige Bücher>Englische Bücher, LAP Lambert Acad. Publ.

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MOCVD growth and electrical characterisation of InAs thin films - Precious Shamba
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Precious Shamba:
MOCVD growth and electrical characterisation of InAs thin films - neues Buch

ISBN: 9783845409887

ID: 0fe2ab232a550fe2daaddfd2de723f74

Many quantum confined devices such as lasers and high electron mobility transistors make use of the narrow band gap and high electron mobility of InAs. The difficulty associated with the preparation of InAs has hindered the development of devices employing this material system. Few systematic studies have been conducted on InAs grown by metalorganic chemical vapour deposition (MOCVD). The majority of recent InAs research has been device orientated and only a few reports of Zn and Sn doped InAs have appeared in print. Basic material characterisation has consequently been neglected. It is the aim of this book to contribute towards a better understanding of the fundamental material characteristics and in particular to improve on the current understanding of the growth dynamics of InAs. For this purpose, InAs epitaxial layers are grown by the MOCVD technique. The emphasis is on gaining an understanding of the influence of various n- and p-type dopants on the electrical and structural properties of the material as well as on the surface morphology of the material. Buch / Broschur

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Mocvd Growth and Electrical Characterisation of Inas Thin Films - Precious Shamba
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Mocvd Growth and Electrical Characterisation of Inas Thin Films - neues Buch

2011, ISBN: 3845409886

ID: 17281372226

[EAN: 9783845409887], Nieuw boek, [SC: 11.0], [PU: LAP Lambert Academic Publishing], New Book. Delivered from our UK warehouse in 3 to 5 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000

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Mocvd Growth and Electrical Characterisation of Inas Thin Films - Shamba, Precious
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Shamba, Precious:
Mocvd Growth and Electrical Characterisation of Inas Thin Films - Taschenbuch

2011, ISBN: 9783845409887

ID: 12284873831

Trade paperback, New., Trade paperback (US). Glued binding. 104 p. Black & white illustrations., [PU: LAP Lambert Academic Publishing]

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2016, ISBN: 9783845409887

ID: 935182871

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MOCVD growth and electrical characterisation of InAs thin films

Many quantum confined devices such as lasers and high electron mobility transistors make use of the....

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EAN (ISBN-13): 9783845409887
ISBN (ISBN-10): 3845409886
Gebundene Ausgabe
Taschenbuch
Erscheinungsjahr: 2011
Herausgeber: LAP Lambert Acad. Publ.

Buch in der Datenbank seit 06.10.2009 10:10:48
Buch zuletzt gefunden am 04.01.2017 07:28:01
ISBN/EAN: 9783845409887

ISBN - alternative Schreibweisen:
3-8454-0988-6, 978-3-8454-0988-7


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