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Kleinster Preis: 165,00 €, größter Preis: 299,23 €, Mittelwert: 198,07 €
Reliability Wearout Mechanisms in Advanced CMOS Technologies - Alvin W. Strong#Ernest Y. Wu#Rolf-Peter Vollertsen
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Reliability Wearout Mechanisms in Advanced CMOS Technologies A comprehensive treatment of all aspects of CMOS reliability wearout mechanisms This book covers everything students and professionals need to know about CMOS reliability wearout mechanisms, from basic concepts to the tools necessary to conduct reliability tests and analyze the results. It is the first book of its kind to bring together the pertinent physics, equations, and procedures for CMOS technology reliability in one place. Divided into six relatively independent topics, the book covers: * Introduction to Reliability * Gate Dielectric Reliability * Negative Bias Temperature Instability * Hot Carrier Injection * Electromigration Reliability * Stress Voiding Chapters conclude with practical appendices that provide very basic experimental procedures for readers who are conducting reliability experiments for the first time. Reliability Wearout Mechanisms in Advanced CMOS Technologies is ideal for students and new engineers who are looking to gain a working understanding of CMOS technology reliability. It is also suitable as a professional reference for experienced circuit design engineers, device design engineers, and process engineers. Bücher / Fremdsprachige Bücher / Englische Bücher 978-0-471-73172-6, Ieee Computer Soc Pr

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[ED: Hardcover], [PU: IEEE COMPUTER SOC PR / John Wiley & Sons], This invaluable resource tells the complete story of failure mechanisms-from basic concepts to the tools necessary to conduct reliability tests and analyze the results. Both a text and a reference work for this important area of semiconductor technology, it assumes no reliability education or experience. It also offers the first reference book with all relevant physics, equations, and step-by-step procedures for CMOS technology reliability in one place. Practical appendices provide basic experimental procedures that include experiment design, performing stressing in the laboratory, data analysis, reliability projections, and interpreting projections. Versandfertig in über 4 Wochen, [SC: 0.00], Neuware, gewerbliches Angebot

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Reliability Wearout Mechanisms in Advanced CMOS Technologies - Strong, Alvin W.; Wu, Ernest Y.; Vollertsen, Rolf-Peter; Sune, Jordi; La Rosa, Giuseppe; Sullivan, Timothy D.; Rauch III, Stewart E.
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Reliability Wearout Mechanisms in Advanced CMOS Technologies Reliability-Wearout-Mechanisms-in-Advanced-CMOS-Technologies~~Alvin-W-Strong Science>Engineering>ELEC Engr Hardcover, Wiley

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2007, ISBN: 9780471731726

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Details zum Buch
Reliability Wearout Mechanisms in Advanced CMOS Technologies
Autor:

Strong, Alvin W.; Wu, Ernest Y.; Vollertsen, Rolf-Peter

Titel:

Reliability Wearout Mechanisms in Advanced CMOS Technologies

ISBN-Nummer:

9780471731726

A comprehensive treatment of all aspects of CMOS reliability wearout mechanisms This book covers everything students and professionals need to know about CMOS reliability wearout mechanisms, from basic concepts to the tools necessary to conduct reliability tests and analyze the results. It is the first book of its kind to bring together the pertinent physics, equations, and procedures for CMOS technology reliability in one place. Divided into six relatively independent topics, the book covers: * Introduction to Reliability * Gate Dielectric Reliability * Negative Bias Temperature Instability * Hot Carrier Injection * Electromigration Reliability * Stress Voiding Chapters conclude with practical appendices that provide very basic experimental procedures for readers who are conducting reliability experiments for the first time. Reliability Wearout Mechanisms in Advanced CMOS Technologies is ideal for students and new engineers who are looking to gain a working understanding of CMOS technology reliability. It is also suitable as a professional reference for experienced circuit design engineers, device design engineers, and process engineers.

Detailangaben zum Buch - Reliability Wearout Mechanisms in Advanced CMOS Technologies


EAN (ISBN-13): 9780471731726
ISBN (ISBN-10): 0471731722
Gebundene Ausgabe
Erscheinungsjahr: 2009
Herausgeber: IEEE COMPUTER SOC PR
624 Seiten
Gewicht: 0,980 kg
Sprache: eng/Englisch

Buch in der Datenbank seit 05.07.2007 07:08:40
Buch zuletzt gefunden am 16.01.2017 13:29:09
ISBN/EAN: 9780471731726

ISBN - alternative Schreibweisen:
0-471-73172-2, 978-0-471-73172-6

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