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Investigations On Magnetron Sputtered Tantalum Oxide Films - G. Mohan Rao#S. Uthanna#S. V. Jagadeesh Chandra
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ISBN: 9783843394222

ID: 190535895

High permittivity dielectrics are studied intensively in the view of their use in the integrated circuits. However, the real emergence of tantalum oxide (Ta2O5) as a dielectric material happened due to its high-dielectric constant, chemical and thermal stability with the promise of compatibility in microelectronic processing. This book covenants with the optimized deposition conditions of Ta2O5 films formed on quartz and p-type Si substrates using dc and rf reactive magnetron sputtering method for structural and optical studies. Further, aluminum metal deposited as a top electrode on Ta2O5 and Si stack to prepare metal oxide semiconductor device for investigating electrical and dielectric properties. The possible ways for depositing good quality Ta2O5 layers on Si, to obtain high dielectric constant explained in this book are quite useful to prepare high quality metal oxide semiconductor device for capacitor applications. Microelectronic device applications Buch (fremdspr.) Bücher>Fremdsprachige Bücher>Englische Bücher, LAP Lambert Academic Publishing

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Investigations On Magnetron Sputtered Tantalum Oxide Films - G. Mohan Rao#S. Uthanna#S. V. Jagadeesh Chandra
Vergriffenes Buch, derzeit bei uns nicht verfügbar.
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G. Mohan Rao#S. Uthanna#S. V. Jagadeesh Chandra:
Investigations On Magnetron Sputtered Tantalum Oxide Films - neues Buch

ISBN: 9783843394222

ID: 120463932

High permittivity dielectrics are studied intensively in the view of their use in the integrated circuits. However, the real emergence of tantalum oxide (Ta2O5) as a dielectric material happened due to its high-dielectric constant, chemical and thermal stability with the promise of compatibility in microelectronic processing. This book covenants with the optimized deposition conditions of Ta2O5 films formed on quartz and p-type Si substrates using dc and rf reactive magnetron sputtering method for structural and optical studies. Further, aluminum metal deposited as a top electrode on Ta2O5 and Si stack to prepare metal oxide semiconductor device for investigating electrical and dielectric properties. The possible ways for depositing good quality Ta2O5 layers on Si, to obtain high dielectric constant explained in this book are quite useful to prepare high quality metal oxide semiconductor device for capacitor applications. Microelectronic device applications Buch (fremdspr.) Bücher>Fremdsprachige Bücher>Englische Bücher, LAP Lambert Acad. Publ.

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INVESTIGATIONS ON MAGNETRON SPUTTERED TANTALUM OXIDE FILMS als Buch von S. V. Jagadeesh Chandra, S Uthanna, G Mohan Rao - LAP Lambert Acad. Publ.
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ISBN: 9783843394222

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INVESTIGATIONS ON MAGNETRON SPUTTERED TANTALUM OXIDE FILMS ab 68 EURO Microelectronic device applications INVESTIGATIONS ON MAGNETRON SPUTTERED TANTALUM OXIDE FILMS ab 68 EURO Microelectronic device applications Bücher > Wissenschaft > Physik

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INVESTIGATIONS ON MAGNETRON SPUTTERED TANTALUM OXIDE FILMS: Microelectronic device applications - Jagadeesh Chandra, S. V.; Uthanna, S; Mohan Rao, G
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Jagadeesh Chandra, S. V.; Uthanna, S; Mohan Rao, G:
INVESTIGATIONS ON MAGNETRON SPUTTERED TANTALUM OXIDE FILMS: Microelectronic device applications - Taschenbuch

2011, ISBN: 9783843394222

ID: 906463079

LAP LAMBERT Academic Publishing, 2011-01-18. Paperback. Used:Good. Ships Fast. Expedite Shipping Available., LAP LAMBERT Academic Publishing, 2011-01-18

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Jagadeesh Chandra, S. V.;Uthanna, S;Mohan Rao, G: INVESTIGATIONS ON MAGNETRON SPUTTERED TANTALUM OXIDE FILMS
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Jagadeesh Chandra, S. V.;Uthanna, S;Mohan Rao, G: INVESTIGATIONS ON MAGNETRON SPUTTERED TANTALUM OXIDE FILMS - neues Buch

ISBN: 9783843394222

ID: 698688677

Microelectronic device applications Microelectronic device applications Bücher > Wissenschaft > Physik

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INVESTIGATIONS ON MAGNETRON SPUTTERED TANTALUM OXIDE FILMS: Microelectronic device applications

High permittivity dielectrics are studied intensively in the view of their use in the integrated circuits. However, the real emergence of tantalum oxide (Ta2O5) as a dielectric material happened due to its high-dielectric constant, chemical and thermal stability with the promise of compatibility in microelectronic processing. This book covenants with the optimized deposition conditions of Ta2O5 films formed on quartz and p-type Si substrates using dc and rf reactive magnetron sputtering method for structural and optical studies. Further, aluminum metal deposited as a top electrode on Ta2O5 and Si stack to prepare metal oxide semiconductor device for investigating electrical and dielectric properties. The possible ways for depositing good quality Ta2O5 layers on Si, to obtain high dielectric constant explained in this book are quite useful to prepare high quality metal oxide semiconductor device for capacitor applications.

Detailangaben zum Buch - INVESTIGATIONS ON MAGNETRON SPUTTERED TANTALUM OXIDE FILMS: Microelectronic device applications


EAN (ISBN-13): 9783843394222
ISBN (ISBN-10): 3843394229
Gebundene Ausgabe
Taschenbuch
Erscheinungsjahr: 2011
Herausgeber: LAP Lambert Acad. Publ.

Buch in der Datenbank seit 09.08.2009 09:58:23
Buch zuletzt gefunden am 22.09.2017 00:44:24
ISBN/EAN: 3843394229

ISBN - alternative Schreibweisen:
3-8433-9422-9, 978-3-8433-9422-2


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