. .
Deutsch
Deutschland
Suchtools
Anmelden

Anmelden mit Facebook:

Registrieren
Passwort vergessen?


Such-Historie
Merkliste
Links zu eurobuch.com

Dieses Buch teilen auf…
Buchtipps
Aktuelles
Get it on iTunesJetzt bei Google Play
Tipp von eurobuch.com
FILTER
- 0 Ergebnisse
Kleinster Preis: 194,90 €, größter Preis: 354,70 €, Mittelwert: 243,21 €
Modeling of Electrical Overstress in Integrated Circuits - Carlos H. Diaz, Charvaka Duvvury, Sung-Mo (Steve) Kang
Vergriffenes Buch, derzeit bei uns nicht verfügbar.
(*)
Carlos H. Diaz, Charvaka Duvvury, Sung-Mo (Steve) Kang:

Modeling of Electrical Overstress in Integrated Circuits - neues Buch

ISBN: 9780792395058

ID: 9780792395058

Electrical overstress (EOS) and Electrostatic discharge (ESD) pose one of the most dominant threats to integrated circuits (ICs). These reliability concerns are becoming more serious with the downward scaling of device feature sizes. Modeling of Electrical Overstress in Integrated Circuits presents a comprehensive analysis of EOS/ESD-related failures in I/O protection devices in integrated circuits. The design of I/O protection circuits has been done in a hit-or-miss way due to the lack Electrical overstress (EOS) and Electrostatic discharge (ESD) pose one of the most dominant threats to integrated circuits (ICs). These reliability concerns are becoming more serious with the downward scaling of device feature sizes. Modeling of Electrical Overstress in Integrated Circuits presents a comprehensive analysis of EOS/ESD-related failures in I/O protection devices in integrated circuits. The design of I/O protection circuits has been done in a hit-or-miss way due to the lack of systematic analysis tools and concrete design guidelines. In general, the development of on-chip protection structures is a lengthy expensive iterative process that involves tester design, fabrication, testing and redesign. When the technology is changed, the same process has to be repeated almost entirely. This can be attributed to the lack of efficient CAD tools capable of simulating the device behavior up to the onset of failure which is a 3-D electrothermal problem. For these reasons, it is important to develop and use an adequate measure of the EOS robustness of integrated circuits in order to address the on-chip EOS protection issue. Fundamental understanding of the physical phenomena leading to device failures under ESD/EOS events is needed for the development of device models and CAD tools that can efficiently describe the device behavior up to the onset of thermal failure. Modeling of Electrical Overstress in Integrated Circuits is for VLSI designers and reliability engineers, particularly those who are working on the development of EOS/ESD analysis tools. CAD engineers working on development of circuit level and device level electrothermal simulators will also benefit from the material covered. This book will also be of interest to researchers and first and second year graduate students working in semiconductor devices and IC reliability fields. Textbooks New, Books~~Technology~~Electrical, Modeling-of-Electrical-Overstress-in-Integrated-Circuits~~Carlos-H-Diaz, 999999999, Modeling of Electrical Overstress in Integrated Circuits, Carlos H. Diaz, Charvaka Duvvury, Sung-Mo (Steve) Kang, 0792395050, Springer US, , , , , Springer US

Neues Buch Barnesandnoble.com
MPN: , SKU 9780792395058 Versandkosten:zzgl. Versandkosten
Details...
(*) Derzeit vergriffen bedeutet, dass dieser Titel momentan auf keiner der angeschlossenen Plattform verfügbar ist.
Modeling Of Electrical Overstress In Integrated Circuits
Vergriffenes Buch, derzeit bei uns nicht verfügbar.
(*)
Modeling Of Electrical Overstress In Integrated Circuits - neues Buch

ISBN: 9780792395058

ID: 6389560

Electrical overstress (EOS) and Electrostatic discharge (ESD) pose one of the most dominant threats to integrated circuits (ICs). These reliability concerns are becoming more serious with the downward scaling of device feature sizes. Modeling of Electrical Overstress in Integrated Circuits presents a comprehensive analysis of EOS/ESD-related failures in I/O protection devices in. Electrical overstress (EOS) and Electrostatic discharge (ESD) pose one of the most dominant threats to integrated circuits (ICs). These reliability concerns are becoming more serious with the downward scaling of device feature sizes. Modeling of Electrical Overstress in Integrated Circuits presents a comprehensive analysis of EOS/ESD-related failures in I/O protection devices in integrated circuits. The design of I/O protection circuits has been done in a hit-or-miss way due to the lack of systematic analysis tools and concrete design guidelines. In general, the development of on-chip protection structures is a lengthy expensive iterative process that involves tester design, fabrication, testing and redesign. When the technology is changed, the same process has to be repeated almost entirely. This can be attributed to the lack of efficient CAD tools capable of simulating the device behavior up to the onset of failure which is a 3-D electrothermal problem. For these reasons, it is important to develop and USE an adequate measure of the EOS robustness of integrated circuits in order to address the on-chip EOS protection issue. Fundamental understanding of the physical phenomena leading to device failures under ESD/EOS events is needed for the development of device models and CAD tools that can efficiently describe the device behavior up to the onset of thermal failure. Modeling of Electrical Overstress in Integrated Circuits is for VLSI designers and reliability engineers, particularly those who are working on the development of EOS/ESD analysis tools. CAD engineers working on development of circuit level and device level electrothermal simulators will also benefit from the material covered. This book will also be of interest to researchers and first and second year graduate students working in semiconductor devices and IC reliability fields. Books, Technology, Engineering and Agriculture~~Electronicsl and Communications Engineering~~Electronics Engineering, Modeling Of Electrical Overstress In Integrated Circuits~~Book~~9780792395058~~Carlos H. Diaz, Sung-Mo Kang, , , , , , , , , ,, [PU: Kluwer Academic Publishers]

Neues Buch Hive.co.uk
MPN: , SKU 6389560 Versandkosten:zzgl. Versandkosten
Details...
(*) Derzeit vergriffen bedeutet, dass dieser Titel momentan auf keiner der angeschlossenen Plattform verfügbar ist.
Modeling of Electrical Overstress in Integrated Circuits - Carlos H. Diaz, Sung-Mo (Steve) Kang
Vergriffenes Buch, derzeit bei uns nicht verfügbar.
(*)
Carlos H. Diaz, Sung-Mo (Steve) Kang:
Modeling of Electrical Overstress in Integrated Circuits - neues Buch

ISBN: 9780792395058

ID: 978079239505

Electrical overstress (EOS) and Electrostatic discharge (ESD) pose one of the most dominant threats to integrated circuits (ICs). These reliability concerns are becoming more serious with the downward scaling of device feature sizes. Modeling of Electrical Overstress in Integrated Circuits presents a comprehensive analysis of EOS/ESD-related failures in I/O protection devices in integrated circuits. The design of I/O protection circuits has been done in a hit-or-miss way due to the lack of systematic analysis tools and concrete design guidelines. In general, the development of on-chip protection structures is a lengthy expensive iterative process that involves tester design, fabrication, testing and redesign. When the technology is changed, the same process has to be repeated almost entirely. This can be attributed to the lack of efficient CAD tools capable of simulating the device behavior up to the onset of failure which is a 3-D electrothermal problem. For these reasons, it is important to develop and use an adequate measure of the EOS robustness of integrated circuits in order to address the on-chip EOS protection issue. Fundamental understanding of the physical phenomena leading to device failures under ESD/EOS events is needed for the development of device models and CAD tools that can efficiently describe the device behavior up to the onset of thermal failure. Modeling of Electrical Overstress in Integrated Circuits is for VLSI designers and reliability engineers, particularly those who are working on the development of EOS/ESD analysis tools. CAD engineers working on development of circuit level and device level electrothermal simulators will also benefit from the material covered. This book will also be of interest to researchers and first and second year graduate students working in semiconductor devices and IC reliability fields. Carlos H. Diaz, Sung-Mo (Steve) Kang, Books, Science and Nature, Modeling of Electrical Overstress in Integrated Circuits Books>Science and Nature, Springer

Neues Buch Indigo.ca
new Free shipping on orders above $25 Versandkosten:zzgl. Versandkosten
Details...
(*) Derzeit vergriffen bedeutet, dass dieser Titel momentan auf keiner der angeschlossenen Plattform verfügbar ist.
Modeling of Electrical Overstress in Integrated Circuits - Carlos H. Diaz#Charvaka Duvvury#Sung-Mo (Steve) Kang
Vergriffenes Buch, derzeit bei uns nicht verfügbar.
(*)
Carlos H. Diaz#Charvaka Duvvury#Sung-Mo (Steve) Kang:
Modeling of Electrical Overstress in Integrated Circuits - neues Buch

ISBN: 9780792395058

ID: 150998376

Electrical overstress (EOS) and Electrostatic discharge (ESD) pose one of the most dominant threats to integrated circuits (ICs). These reliability concerns are becoming more serious with the downward scaling of device feature sizes. Modeling of Electrical Overstress in Integrated Circuits presents a comprehensive analysis of EOS/ESD-related failures in I/O protection devices in integrated circuits. The design of I/O protection circuits has been done in a hit-or-miss way due to the lack of systematic analysis tools and concrete design guidelines. In general, the development of on-chip protection structures is a lengthy expensive iterative process that involves tester design, fabrication, testing and redesign. When the technology is changed, the same process has to be repeated almost entirely. This can be attributed to the lack of efficient CAD tools capable of simulating the device behavior up to the onset of failure which is a 3-D electrothermal problem. For these reasons, it is important to develop and use an adequate measure of the EOS robustness of integrated circuits in order to address the on-chip EOS protection issue. Fundamental understanding of the physical phenomena leading to device failures under ESD/EOS events is needed for the development of device models and CAD tools that can efficiently describe the device behavior up to the onset of thermal failure. Modeling of Electrical Overstress in Integrated Circuits is for VLSI designers and reliability engineers, particularly those who are working on the development of EOS/ESD analysis tools. CAD engineers working on development of circuit level and device level electrothermal simulators will also benefit from the material covered. This book will also be of interest to researchers and first and second year graduate students working in semiconductor devices and IC reliability fields. Modeling of Electrical Overstress in Integrated Circuits Buch (fremdspr.) Bücher>Fremdsprachige Bücher>Englische Bücher, Springer

Neues Buch Thalia.de
No. 5082471 Versandkosten:, Versandfertig in 3 - 5 Tagen, DE (EUR 0.00)
Details...
(*) Derzeit vergriffen bedeutet, dass dieser Titel momentan auf keiner der angeschlossenen Plattform verfügbar ist.
Modeling of Electrical Overstress in Integrated Circuits (The Springer International Series in Engineering and Computer Science) - H., Carlos; (Steve), Sung-Mo; Duvvury, Charvaka
Vergriffenes Buch, derzeit bei uns nicht verfügbar.
(*)
H., Carlos; (Steve), Sung-Mo; Duvvury, Charvaka:
Modeling of Electrical Overstress in Integrated Circuits (The Springer International Series in Engineering and Computer Science) - gebrauchtes Buch

ISBN: 9780792395058

ID: 735307291

1 volume, please be aware of language, air mail shipment from Germany within 2-6 weeks, we deliver to any country - please ask us to enable delivery to your country!

gebrauchtes bzw. antiquarisches Buch Biblio.com
buxbox
Versandkosten: EUR 101.82
Details...
(*) Derzeit vergriffen bedeutet, dass dieser Titel momentan auf keiner der angeschlossenen Plattform verfügbar ist.

< zum Suchergebnis...
Details zum Buch
Modeling of Electrical Overstress in Integrated Circuits
Autor:

Diaz, Carlos H.; Duvvury, Charvaka; Sung-Mo (Steve) Kang

Titel:

Modeling of Electrical Overstress in Integrated Circuits

ISBN-Nummer:

0792395050

Electrical overstress (EOS) and Electrostatic discharge (ESD) pose one of the most dominant threats to integrated circuits (ICs). These reliability concerns are becoming more serious with the downward scaling of device feature sizes. Modeling of Electrical Overstress in Integrated Circuits presents a comprehensive analysis of EOS/ESD-related failures in I/O protection devices in integrated circuits. The design of I/O protection circuits has been done in a hit-or-miss way due to the lack of systematic analysis tools and concrete design guidelines. In general, the development of on-chip protection structures is a lengthy expensive iterative process that involves tester design, fabrication, testing and redesign. When the technology is changed, the same process has to be repeated almost entirely. This can be attributed to the lack of efficient CAD tools capable of simulating the device behavior up to the onset of failure which is a 3-D electrothermal problem. For these reasons, it is important to develop and use an adequate measure of the EOS robustness of integrated circuits in order to address the on-chip EOS protection issue. Fundamental understanding of the physical phenomena leading to device failures under ESD/EOS events is needed for the development of device models and CAD tools that can efficiently describe the device behavior up to the onset of thermal failure. Modeling of Electrical Overstress in Integrated Circuits is for VLSI designers and reliability engineers, particularly those who are working on the development of EOS/ESD analysis tools. CAD engineers working on development of circuit level and device level electrothermal simulators will also benefit from the material covered. This book will also be of interest to researchers and first and second year graduate students working in semiconductor devices and IC reliability fields.

Detailangaben zum Buch - Modeling of Electrical Overstress in Integrated Circuits


EAN (ISBN-13): 9780792395058
ISBN (ISBN-10): 0792395050
Gebundene Ausgabe
Erscheinungsjahr: 1994
Herausgeber: Springer-Verlag GmbH
178 Seiten
Gewicht: 0,438 kg
Sprache: eng/Englisch

Buch in der Datenbank seit 06.11.2007 18:07:32
Buch zuletzt gefunden am 28.07.2016 23:26:29
ISBN/EAN: 0792395050

ISBN - alternative Schreibweisen:
0-7923-9505-0, 978-0-7923-9505-8

< zum Suchergebnis...
< zum Archiv...
Benachbarte Bücher