Fundamentals of Nanoscaled Field Effect Transistors / Amit Chaudhry / Buch / HC gerader Rücken kaschiert / XIV / Englisch / 2013 / Springer New York / EAN 9781461468219 - gebunden oder broschiert
2013, ISBN: 9781461468219
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Fundamentals of Nanoscaled Field Effect Transistors / Amit Chaudhry / Buch / HC gerader Rücken kaschiert / XIV / Englisch / 2013 / Springer New York / EAN 9781461468219 - gebunden oder broschiert
2013, ISBN: 9781461468219
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2023, ISBN: 9781461468219
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Fundamentals of Nanoscaled Field Effect Transistors - gebunden oder broschiert
2013, ISBN: 1461468213
2013 Gebundene Ausgabe Elektronik / Mikroelektronik, Mikroelektronik, Optik, Nanowissenschaften, Technische Anwendung von elektronischen, magnetischen, optischen Materialien, Elektronik… Mehr…
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Fundamentals of Nanoscaled Field Effect Transistors - gebunden oder broschiert
ISBN: 9781461468219
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Fundamentals of Nanoscaled Field Effect Transistors / Amit Chaudhry / Buch / HC gerader Rücken kaschiert / XIV / Englisch / 2013 / Springer New York / EAN 9781461468219 - gebunden oder broschiert
2013, ISBN: 9781461468219
[ED: Gebunden], [PU: Springer New York], Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscal… Mehr…
Chaudhry, Amit:
Fundamentals of Nanoscaled Field Effect Transistors / Amit Chaudhry / Buch / HC gerader Rücken kaschiert / XIV / Englisch / 2013 / Springer New York / EAN 9781461468219 - gebunden oder broschiert2013, ISBN: 9781461468219
[ED: Gebunden], [PU: Springer New York], Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscal… Mehr…
Fundamentals of Nanoscaled Field Effect Transistors - neues Buch
2023
ISBN: 9781461468219
[ED: Buch], [PU: Springer New York], Neuware - Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind na… Mehr…
Fundamentals of Nanoscaled Field Effect Transistors - gebunden oder broschiert
2013, ISBN: 1461468213
2013 Gebundene Ausgabe Elektronik / Mikroelektronik, Mikroelektronik, Optik, Nanowissenschaften, Technische Anwendung von elektronischen, magnetischen, optischen Materialien, Elektronik… Mehr…
Fundamentals of Nanoscaled Field Effect Transistors - gebunden oder broschiert
ISBN: 9781461468219
Hardback, [PU: Springer-Verlag New York Inc.], Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind na… Mehr…
Bibliographische Daten des bestpassenden Buches
Autor: | |
Titel: | |
ISBN-Nummer: |
Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.
Detailangaben zum Buch - Fundamentals of Nanoscaled Field Effect Transistors
EAN (ISBN-13): 9781461468219
ISBN (ISBN-10): 1461468213
Gebundene Ausgabe
Erscheinungsjahr: 2013
Herausgeber: Springer-Verlag GmbH
201 Seiten
Gewicht: 0,464 kg
Sprache: Englisch
Buch in der Datenbank seit 2008-11-24T03:58:44+01:00 (Berlin)
Detailseite zuletzt geändert am 2024-01-13T18:07:55+01:00 (Berlin)
ISBN/EAN: 1461468213
ISBN - alternative Schreibweisen:
1-4614-6821-3, 978-1-4614-6821-9
Alternative Schreibweisen und verwandte Suchbegriffe:
Autor des Buches: amit, chaudhry
Titel des Buches: the fundamentals, transistors, transistor, amit
Daten vom Verlag:
Autor/in: Amit Chaudhry
Titel: Fundamentals of Nanoscaled Field Effect Transistors
Verlag: Springer; Springer US
201 Seiten
Erscheinungsjahr: 2013-04-23
New York; NY; US
Gedruckt / Hergestellt in Niederlande.
Gewicht: 4,498 kg
Sprache: Englisch
106,99 € (DE)
109,99 € (AT)
118,00 CHF (CH)
POD
XIV, 201 p. 121 illus., 102 illus. in color.
BB; Electronics and Microelectronics, Instrumentation; Hardcover, Softcover / Technik/Elektronik, Elektrotechnik, Nachrichtentechnik; Elektronik; Verstehen; Ballistic Effect Devices; Biaxial Strained Si Technology; Compact MOSFET Models; Electron Devices; MOSFETs at Nanoscale; Nanoscale MOS Transistors; Nanoscale MOSFET; Transistor Quantum Effects; Electronic Circuits and Devices; Circuits and Systems; Nanoscale Science and Technology; Optical and Electronic Materials; Electronics and Microelectronics, Instrumentation; Electronic Circuits and Systems; Nanophysics; Optical Materials; Schaltkreise und Komponenten (Bauteile); Physik der kondensierten Materie (Flüssigkeits- und Festkörperphysik); Nanowissenschaften; Technische Anwendung von elektronischen, magnetischen, optischen Materialien; EA; BC
gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.
Fundamentals of Nanoscaled Field Effect TransistorsScaling of a MOS Transistor.- Nanoscale Effects- Gate Oxide Leakage Currents.- Nanoscale Effects- Inversion Layer Quantization.- Dielectrics for Nanoelectronics.- Germanium Technology.- Biaxial s-Si Technology.- Uniaxial s-Si Technology.- Alternate MOS Structures.- Graphene Technology.
gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.
In summary, this book:
Covers the fundamental principles behind nanoelectronics/microelectronics
Includes chapters devoted to solutions tackling the quantum mechanical effects occurring at nanoscale
Provides some case studies to understand the issue mathematically
is an ideal book for researchers and undergraduate and graduate students in the field of microelectronics, nanoelectronics, and electronics.
Fundamentals of Nanoscaled Field Effect Transistors Fundamentals of Nanoscaled Field Effect TransistorsCovers the fundamental principles behind nanoelectronics/microelectronics
Includes chapters devoted to solutions tackling the quantum mechanical effects occurring at nanoscale
Provides some case studies to understand the issue mathematically
Includes supplementary material: sn.pub/extras
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