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Kleinster Preis: 62.57 EUR, größter Preis: 69.90 EUR, Mittelwert: 67.29 EUR
Investigations On Magnetron Sputtered Tantalum Oxide Films - G. Mohan Rao#S. Uthanna#S. V. Jagadeesh Chandra
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G. Mohan Rao#S. Uthanna#S. V. Jagadeesh Chandra:

Investigations On Magnetron Sputtered Tantalum Oxide Films - neues Buch

ISBN: 9783843394222

ID: ad631bc30eba8d8e32ec69be885c2c9c

Microelectronic device applications High permittivity dielectrics are studied intensively in the view of their use in the integrated circuits. However, the real emergence of tantalum oxide (Ta2O5) as a dielectric material happened due to its high-dielectric constant, chemical and thermal stability with the promise of compatibility in microelectronic processing. This book covenants with the optimized deposition conditions of Ta2O5 films formed on quartz and p-type Si substrates using dc and rf reactive magnetron sputtering method for structural and optical studies. Further, aluminum metal deposited as a top electrode on Ta2O5 and Si stack to prepare metal oxide semiconductor device for investigating electrical and dielectric properties. The possible ways for depositing good quality Ta2O5 layers on Si, to obtain high dielectric constant explained in this book are quite useful to prepare high quality metal oxide semiconductor device for capacitor applications. Bücher / Fremdsprachige Bücher / Englische Bücher 978-3-8433-9422-2, LAP Lambert Acad. Publ.

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Investigations On Magnetron Sputtered Tantalum Oxide Films - G. Mohan Rao#S. Uthanna#S. V. Jagadeesh Chandra
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G. Mohan Rao#S. Uthanna#S. V. Jagadeesh Chandra:

Investigations On Magnetron Sputtered Tantalum Oxide Films - neues Buch

ISBN: 9783843394222

ID: 120463932

High permittivity dielectrics are studied intensively in the view of their use in the integrated circuits. However, the real emergence of tantalum oxide (Ta2O5) as a dielectric material happened due to its high-dielectric constant, chemical and thermal stability with the promise of compatibility in microelectronic processing. This book covenants with the optimized deposition conditions of Ta2O5 films formed on quartz and p-type Si substrates using dc and rf reactive magnetron sputtering method for structural and optical studies. Further, aluminum metal deposited as a top electrode on Ta2O5 and Si stack to prepare metal oxide semiconductor device for investigating electrical and dielectric properties. The possible ways for depositing good quality Ta2O5 layers on Si, to obtain high dielectric constant explained in this book are quite useful to prepare high quality metal oxide semiconductor device for capacitor applications. Microelectronic device applications Buch (fremdspr.) Bücher>Fremdsprachige Bücher>Englische Bücher, LAP Lambert Acad. Publ.

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Investigations on Magnetron Sputtered Tantalum Oxide Films - Jagadeesh Chandra, S. V.; Uthanna, S. and Mohan Rao, G.
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Jagadeesh Chandra, S. V.; Uthanna, S. and Mohan Rao, G.:
Investigations on Magnetron Sputtered Tantalum Oxide Films - Taschenbuch

2011

ISBN: 3843394229

ID: 4238884783

[EAN: 9783843394222], Neubuch, [PU: LAP LAMBERT ACADEMIC PUB], New book. Shipped within the US in 10-14 days. This item is printed on demand.

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INVESTIGATIONS ON MAGNETRON SPUTTERED TANTALUM OXIDE FILMS - Jagadeesh Chandra, S. V. / Uthanna, S / Mohan Rao, G
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Jagadeesh Chandra, S. V. / Uthanna, S / Mohan Rao, G:
INVESTIGATIONS ON MAGNETRON SPUTTERED TANTALUM OXIDE FILMS - Taschenbuch

2011, ISBN: 3843394229

Gebundene Ausgabe, ID: 10153204

Microelectronic device applications - Buch, gebundene Ausgabe, 188 S., Beilagen: Paperback, Erschienen: 2011 LAP Lambert Acad. Publ.

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Investigations On Magnetron Sputtered Tantalum Oxide Films - Mohan Rao, G
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Mohan Rao, G:
Investigations On Magnetron Sputtered Tantalum Oxide Films - Taschenbuch

2011, ISBN: 3843394229

ID: 4372057097

[EAN: 9783843394222], Neubuch, [PU: LAP Lambert Academic Publishing 01/06/2011], New print-on-demand paperback This item is printed on demand.

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INVESTIGATIONS ON MAGNETRON SPUTTERED TANTALUM OXIDE FILMS: Microelectronic device applications
Autor:

Jagadeesh Chandra, S. V. / Uthanna, S / Mohan Rao, G

Titel:

INVESTIGATIONS ON MAGNETRON SPUTTERED TANTALUM OXIDE FILMS: Microelectronic device applications

ISBN-Nummer:

9783843394222

High permittivity dielectrics are studied intensively in the view of their use in the integrated circuits. However, the real emergence of tantalum oxide (Ta2O5) as a dielectric material happened due to its high-dielectric constant, chemical and thermal stability with the promise of compatibility in microelectronic processing. This book covenants with the optimized deposition conditions of Ta2O5 films formed on quartz and p-type Si substrates using dc and rf reactive magnetron sputtering method for structural and optical studies. Further, aluminum metal deposited as a top electrode on Ta2O5 and Si stack to prepare metal oxide semiconductor device for investigating electrical and dielectric properties. The possible ways for depositing good quality Ta2O5 layers on Si, to obtain high dielectric constant explained in this book are quite useful to prepare high quality metal oxide semiconductor device for capacitor applications.

Detailangaben zum Buch - INVESTIGATIONS ON MAGNETRON SPUTTERED TANTALUM OXIDE FILMS: Microelectronic device applications


EAN (ISBN-13): 9783843394222
ISBN (ISBN-10): 3843394229
Gebundene Ausgabe
Taschenbuch
Erscheinungsjahr: 2011
Herausgeber: LAP Lambert Acad. Publ.

Buch in der Datenbank seit 09.08.2009 09:58:23
Buch zuletzt gefunden am 22.02.2016 14:55:27
ISBN/EAN: 9783843394222

ISBN - alternative Schreibweisen:
3-8433-9422-9, 978-3-8433-9422-2

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