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III-Nitride Semiconductor Materials - Feng, Zhe Chuan
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ISBN: 9781860946363

III-Nitride semiconductor materials — (Al, In, Ga)N — are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment. The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals. Sample Chapter(s). Chapter 1: Hydride Vapor Phase Epitaxy of Group III Nitride Materials (540 KB). Contents: Hydride Vapor Phase Epitaxy of Group III Nitride Materials (V Dmitriev & A Usikov); Planar MOVPE Technology for Epitaxy of III-Nitride Materials (M Dauelsberg et al.); Close-Coupled Showerhead MOCVD Technology for the Epitaxy of GaN and Related Materials (E J Thrush & A R Boyd); Molecular Beam Epitaxy for III-N Materials (H Tang & J Webb); Growth and Properties of Nonpolar GaN Films and Heterostructures (Y J Sun & O Brandt); Indium-Nitride Growth by High-Pressure CVD: Real-Time and Ex-Situ Characterization (N Dietz); A New Look on InN (L-W Tu et al.); Growth and Optical/Electrical Properties of Al x Ga 1-x N Alloys in the Full Composition Range (F Yun); Optical Investigation of InGaN/GaN Quantum Well Structures Grown by MOCVD (T Wang); Clustering Nanostructures and Optical Characteristics in InGaN/GaN Quantum-Well Structures with Silicon Doping (Y-C Cheng et al.); III-Nitrides Micro- and Nano-Structures (H M Ng & A Chowdhury); New Developments in Dilute Nitride Semiconductor Research (W Shan et al.). Readership: Scientists; material growers and evaluators; device design, processing engineers; postgraduate and graduate students in electrical & electronic engineering and materials engineering. Technology Technology eBook

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III-Nitride Semiconductor Materials - Feng, Zhe Chuan (ed.)
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ISBN: 9781860946363

[ED: Hardcover], [PU: WORLD SCIENTIFIC PUB CO INC], III-Nitride semiconductor materials - (Al, In, Ga)N - are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment.The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals.Content:- Hydride Vapor Phase Epitaxy of Group III Nitride Materials (V Dmitriev & A Usikov)- Planar MOVPE Technology for Epitaxy of III-Nitride Materials (M Dauelsberg et al.)- Close-Coupled Showerhead MOCVD Technology for the Epitaxy of GaN and Related Materials (E J Thrush & A R Boyd)- Molecular Beam Epitaxy for III-N Materials (H Tang & J Webb)- Growth and Properties of Nonpolar GaN Films and Heterostructures (Y J Sun & O Brandt)- Indium-Nitride Growth by High-Pressure CVD: Real-Time and Ex-Situ Characterization (N Dietz)- A New Look on InN (L-W Tu et al.)- Growth and Optical/Electrical Properties of AlxGa1-xN Alloys in the Full Composition Range (F Yun)- Optical Investigation of InGaN/GaN Quantum Well Structures Grown by MOCVD (T Wang)- Clustering Nanostructures and Optical Characteristics in InGaN/GaN Quantum-Well Structures with Silicon Doping (Y-C Cheng et al.)- III-Nitrides Micro- and Nano-Structures (H M Ng & A Chowdhury)- New Developments in Dilute Nitride Semiconductor Research (W Shan et al.)440 pagesVersandfertig in über 4 Wochen, [SC: 0.00]

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Iii-nitride Semiconductor Materials - Zhe Chuan Feng (Editor)
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Zhe Chuan Feng (Editor):
Iii-nitride Semiconductor Materials - gebunden oder broschiert

ISBN: 1860946364

[SR: 4376656], Hardcover, [EAN: 9781860946363], World Scientific Publishing Company, World Scientific Publishing Company, Book, [PU: World Scientific Publishing Company], World Scientific Publishing Company, III-Nitride semiconductor materials — (Al, In, Ga)N — are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment. The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards suc, 13588, Physical & Theoretical, 16052641, Electrochemistry, 16052591, Physical Chemistry, 16052671, Quantum Chemistry, 13570, Chemistry, 75, Science & Math, 1000, Subjects, 283155, Books, 13911, Differential Equations, 226699, Applied, 13884, Mathematics, 75, Science & Math, 1000, Subjects, 283155, Books, 468218, Mathematics, 491542, Algebra & Trigonometry, 491544, Calculus, 491546, Geometry, 491548, Statistics, 468216, Science & Mathematics, 465600, New, Used & Rental Textbooks, 2349030011, Specialty Boutique, 283155, Books, 491718, Chemistry, 468216, Science & Mathematics, 465600, New, Used & Rental Textbooks, 2349030011, Specialty Boutique, 283155, Books

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Iii-nitride Semiconductor Materials Author :Zhe Chuan Feng 9781860946363 1860946364, [PU: Imperial College Press]

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Ill-Nitride Semiconductor Materials - Zhe Chuan Feng
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2006, ISBN: 9781860946363

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III-Nitride Semiconductor Materials
Autor:

Zhe Chuan Feng (Editor)

Titel:

III-Nitride Semiconductor Materials

ISBN-Nummer:

9781860946363

Detailangaben zum Buch - III-Nitride Semiconductor Materials


EAN (ISBN-13): 9781860946363
ISBN (ISBN-10): 1860946364
Gebundene Ausgabe
Erscheinungsjahr: 2006
Herausgeber: WORLD SCIENTIFIC PUB CO (
428 Seiten
Gewicht: 0,771 kg
Sprache: eng/Englisch

Buch in der Datenbank seit 03.01.2008 10:04:56
Buch zuletzt gefunden am 05.02.2016 19:24:59
ISBN/EAN: 9781860946363

ISBN - alternative Schreibweisen:
1-86094-636-4, 978-1-86094-636-3

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