ISBN: 9781461402695
The devices described in "Advanced MOS-Gated Thyristor Concepts" are utilized in microelectronics production equipment, in power transmission equipment, and for very high power motor cont… Mehr…
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ISBN: 9781461402695
The devices described in “Advanced MOS-Gated Thyristor Concepts” are utilized in microelectronics production equipment, in power transmission equipment, and for very high power motor cont… Mehr…
Springer.com Nr. 978-1-4614-0269-5. Versandkosten:Worldwide free shipping, , DE. (EUR 0.00) Details... |
ISBN: 9781461402695
This work describes the devices used in microelectronics production and power transmission equipment, and in very high-power motor control such as electric trains and steel-mills. It disc… Mehr…
hive.co.uk No. 9781461402695. Versandkosten:Instock, Despatched same working day before 3pm, zzgl. Versandkosten. Details... |
2011, ISBN: 9781461402695
eBooks, eBook Download (PDF), Auflage, [PU: Springer-Verlag], [ED: 1], Springer-Verlag, 2011
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2011, ISBN: 9781461402695
eBooks, eBook Download (PDF), 2012, [PU: Springer New York], Springer New York, 2011
lehmanns.de Versandkosten:Download sofort lieferbar. (EUR 0.00) Details... |
ISBN: 9781461402695
The devices described in "Advanced MOS-Gated Thyristor Concepts" are utilized in microelectronics production equipment, in power transmission equipment, and for very high power motor cont… Mehr…
ISBN: 9781461402695
The devices described in “Advanced MOS-Gated Thyristor Concepts” are utilized in microelectronics production equipment, in power transmission equipment, and for very high power motor cont… Mehr…
ISBN: 9781461402695
This work describes the devices used in microelectronics production and power transmission equipment, and in very high-power motor control such as electric trains and steel-mills. It disc… Mehr…
2011, ISBN: 9781461402695
eBooks, eBook Download (PDF), Auflage, [PU: Springer-Verlag], [ED: 1], Springer-Verlag, 2011
2011, ISBN: 9781461402695
eBooks, eBook Download (PDF), 2012, [PU: Springer New York], Springer New York, 2011
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Detailangaben zum Buch - Advanced High Voltage Power Device Concepts
EAN (ISBN-13): 9781461402695
ISBN (ISBN-10): 1461402697
Erscheinungsjahr: 2011
Herausgeber: Springer-Verlag
568 Seiten
Sprache: eng/Englisch
Buch in der Datenbank seit 2012-11-10T14:00:10+01:00 (Berlin)
Detailseite zuletzt geändert am 2024-03-13T09:26:26+01:00 (Berlin)
ISBN/EAN: 9781461402695
ISBN - alternative Schreibweisen:
1-4614-0269-7, 978-1-4614-0269-5
Alternative Schreibweisen und verwandte Suchbegriffe:
Autor des Buches: bali, jayant baliga, rinehart
Titel des Buches: concepts advanced, volta, high power, high concept, high voltage
Daten vom Verlag:
Autor/in: B. Jayant Baliga
Titel: Advanced High Voltage Power Device Concepts
Verlag: Springer; Springer US
568 Seiten
Erscheinungsjahr: 2011-09-21
New York; NY; US
Gedruckt / Hergestellt in Großbritannien.
Sprache: Englisch
213,99 € (DE)
220,00 € (AT)
236,00 CHF (CH)
Available
XVI, 568 p.
EA; E107; eBook; Nonbooks, PBS / Technik/Elektronik, Elektrotechnik, Nachrichtentechnik; Elektrotechnik; Verstehen; Emitter Switched Thyristor; Insulated Gate Bipolar Transistors; MOS-Controlled Thyristors; Semiconductors; SiC Devices; B; Power Electronics, Electrical Machines and Networks; Circuits and Systems; Electronics and Microelectronics, Instrumentation; Solid State Physics; Electrical Power Engineering; Electronic Circuits and Systems; Electronics and Microelectronics, Instrumentation; Condensed Matter Physics; Engineering; Schaltkreise und Komponenten (Bauteile); Elektronik; Physik der kondensierten Materie (Flüssigkeits- und Festkörperphysik); BB
1 Introduction.- 2 Silicon Thyristors.- 3 Silicon Carbide Thyristors.- 4 Silicon GTO.- 5 Silicon IGBT.- 6 SiC Planar MOSFET Structures.- 7 Silicon Carbide IGBT.- 8 Silicon MCT.- 9 Silicon BRT.- 10 Silicon EST.- 11 Synopsis.
Provides the first comprehensive treatment of high voltage (over 5000-volts) power devices suitable for the power distribution, traction, and motor-control markets
Includes analytical formulations for all the device structures with validation performed using numerical simulations
Analyzes potential silicon carbide structures that could compete with the silicon devices and includes a comparison of the devices
Includes supplementary material: sn.pub/extras
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