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Current Therapy in Equine Medicine 4 - Robinson
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Advanced Gate Stacks for High-Mobility Semiconductors - Athanasios Dimoulas#Evgeni Gusev#Paul C. McIntyre#Paul C. MacIntyre
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Will nanoelectronic devices continue to scale according to Moore s law? At this moment, there is no easy answer since gate scaling is rapidly emerging as a serious roadblock for the evolution of CMOS technology. Channel engineering based on high-mobility semiconductor materials (e.g. strained Si, alternative orientation substrates, Ge or III-V compounds) could help overcome the obstacles since they offer performance enhancement. There are several concerns though. Do we know how to make complex engineered substrates (e.g. Germanium-on-Insulator)? Which are the best interface passivation methodologies and (high-k) gate dielectrics on Ge and III-V compounds? Can we process these materials in short channel transistors using flows, toolsets and know how similar to that in Si technology? How do these materials and devices behave at the nanoscale? The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any close to a viable Ge and III-V MOS technology. Advanced Gate Stacks for High-Mobility Semiconductors Buch (fremdspr.) Bücher>Fremdsprachige Bücher>Englische Bücher, Springer

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Advanced Gate Stacks for High-Mobility Semiconductors - Athanasios Dimoulas
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[ED: Buch], [PU: Springer-Verlag GmbH], Neuware - Will nanoelectronic devices continue to scale according to Moore s law At this moment, there is no easy answer since gate scaling is rapidly emerging as a serious roadblock for the evolution of CMOS technology. Channel engineering based on high-mobility semiconductor materials (e.g. strained Si, alternative orientation substrates, Ge or III-V compounds) could help overcome the obstacles since they offer performance enhancement. There are several concerns though. Do we know how to make complex engineered substrates (e.g. Germanium-on-Insulator) Which are the best interface passivation methodologies and (high-k) gate dielectrics on Ge and III-V compounds Can we process these materials in short channel transistors using flows, toolsets and know how similar to that in Si technology How do these materials and devices behave at the nanoscale The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any close to a viable Ge and III-V MOS technology., [SC: 0.00]

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Advanced Gate Stacks for High-Mobility Semiconductors
Autor:

Athanasios Dimoulas

Titel:

Advanced Gate Stacks for High-Mobility Semiconductors

ISBN-Nummer:

3540714901

This book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers, engineers and graduate students alike. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.

Detailangaben zum Buch - Advanced Gate Stacks for High-Mobility Semiconductors


EAN (ISBN-13): 9783540714903
ISBN (ISBN-10): 3540714901
Gebundene Ausgabe
Erscheinungsjahr: 2007
Herausgeber: Springer-Verlag GmbH
383 Seiten
Gewicht: 0,771 kg
Sprache: eng/Englisch

Buch in der Datenbank seit 31.12.2007 20:02:47
Buch zuletzt gefunden am 20.12.2016 18:36:23
ISBN/EAN: 3540714901

ISBN - alternative Schreibweisen:
3-540-71490-1, 978-3-540-71490-3

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